From Silicon to Sustainability, 2D FETs as Building block for Green Electronics

Abstract

 The continuous advancement of field-effect transistors (FETs) has reshaped the electrical performance and energy efficiency of modern semiconductor devices. This study looks at how the electrical characteristics of contemporary FET designs, such as FinFETs, Gate-All-Around (GAA) Nanosheet FETs, and 2D-material-based FETs, are changing. The primary objectives are to identify the critical factors that influence electrical efficiency, such as threshold voltage, subthreshold swing (SS), drain-induced barrier lowering (DIBL), and power-delay product (PDP), and to examine how latest advancements in devices promote environmentally conscious design. The methodology involves reviewing comparative performance data and experimental trends reported across recent nanoscale transistor studies. Emphasis is placed on electrical parameter analysis rather than structural modeling, evaluating improvements in current drive, leakage reduction, and power optimization under advanced technology nodes. Results indicate that GAA and 2D FETs demonstrate superior gate controllability, lower leakage currents, and reduced dynamic power consumption, supporting sustainable low-voltage operation. Additionally, the integration of eco-friendly channel materials, such as transition metal dichalcogenides (TMDs) and graphene, reduces process-related carbon footprint and toxic waste generation. Overall, the findings highlight that the emerging trends in FET electrical behavior enable high-speed, low-power device performance and also align with global efforts toward green and energy-efficient semiconductor technology for AI, IoT, and edge applications.